Heat Sink Integrated Power Delivery and Distribution for Integrated Circuits

ABSTRACT

A mechanism is provided for integrated power delivery and distribution via a heat sink. The mechanism comprises a processor layer coupled to a signaling and input/output (I/O) layer via a first set of coupling devices and a heat sink coupled to the processor layer via a second set of coupling devices. In the mechanism, the heat sink comprises a plurality of grooves on one face, where each groove provides either a path for power or a path for ground to be delivered to the processor layer. In the mechanism, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the mechanism and the signaling and I/O layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

BACKGROUND

The present application relates generally to an improved data processing apparatus and method and more specifically to mechanisms for integrated power delivery and distribution to integrated circuits via a heat sink.

Three-dimensional (3D) integration provides performance improvements for microprocessor architectures through the increased interconnectivity between tiers within the chip stack. However, the electrical off-stack connectivity (signals and power) is still implemented on only one surface of the chip stack and does not scale with the number of tiers. With further scaling of complementary metal-oxide-semiconductor (CMOS) transistors the number of C4s will not be sufficient even for single dies, due to the slow reduction in C4 pitch over time. For 3D chip stacks, this results in severe design constraints and reduces the performance gain possible from vertical integration.

SUMMARY

In one embodiment, a three-dimensional (3D) very-large-scale integration (VLSI) device is provided. The 3D VLSI device comprises a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer. The 3D VLSI device further comprises a heat sink coupled, via a second set of coupling devices, to the processor layer. In the 3D VLSI device, the heat sink comprises a plurality of grooves on one face. In the 3D VLSI device, each groove in the plurality of grooves provides either path for power or a path for ground to be delivered to the processor layer. In the 3D VLSI device, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device. In the 3D VLSI device, the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

In another illustrative embodiment, a data processing system is provided. The data processing system comprising a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer. The data processing system also comprises a heat sink coupled, via a second set of coupling devices, to the processor layer. In the data processing system, the heat sink comprises a plurality of grooves on one face. In the data processing system, each groove in the plurality of grooves provides either a path for power or a path for ground to be delivered to the processor layer. In the data processing system, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device. In the data processing system, the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

In yet another illustrative embodiment, a method, in a data processing system, is provided for integrated power delivery and distribution to integrated circuits via a heat sink in a three-dimensional very-large-scale integration (VLSI) device. The illustrative embodiment couples a processor layer to at least one signaling and input/output (I/O) layer using a first set of coupling devices. The illustrative embodiment couples the heat sink to the processor layer using a second set of coupling devices. In the illustrative embodiment, the heat sink comprises a plurality of grooves on one face. In the illustrative embodiment, each groove in the plurality of grooves provides either path for power or a path for ground to be delivered to the processor layer. In the illustrative embodiment, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device. In the illustrative embodiment, the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

These and other features and advantages of the present invention will be described in, or will become apparent to those of ordinary skill in the art in view of, the following detailed description of the example embodiments of the present invention.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The invention, as well as a preferred mode of use and further objectives and advantages thereof, will best be understood by reference to the following detailed description of illustrative embodiments when read in conjunction with the accompanying drawings, wherein:

FIG. 1 depicts a block diagram of a data processing system with which aspects of the illustrative embodiments may advantageously be utilized;

FIG. 2 depicts one example of a three-dimensional (3D) very-large-scale integration (VLSI) architecture in accordance with an illustrative embodiment; and

FIGS. 3A-3C depict an example of a power delivery system implementation in accordance with an illustrative embodiment.

DETAILED DESCRIPTION

One illustrative embodiment provides a mechanism for optimizing semiconductor packing in a three-dimensional (3D) stack by dedicating one side of the 3D to power delivery and the other side of the 3D stack to high speed signaling delivery. Power delivery and high speed signal issues for the 3D stack are then solved by use of through silicon vias (TSVs). In another illustrative embodiment, delivery of multiple power voltages required by a 3D stack are provided via a heat sink that provides an integrated power delivery and distribution to the various integrated circuits of the 3D stack.

Thus, the illustrative embodiments may be utilized in many different types of data processing environments including a distributed data processing environment, a single data processing device, or the like. In order to provide a context for the description of the specific elements and functionality of the illustrative embodiments, FIG. 1 is provided hereafter as example environments in which aspects of the illustrative embodiments may be implemented. While the description following FIG. 1 will focus primarily on a single data processing device implementation for a three-dimensional processor core architecture that provides performance improvement through an increased interconnectivity and higher packaging density, this is only an example and is not intended to state or imply any limitation with regard to the features of the present invention. To the contrary, the illustrative embodiments are intended to include distributed data processing environments and embodiments in which performance improvement through an increased interconnectivity and higher packaging density may be provided for a three-dimensional processor core architecture.

Referring now to the drawings and in particular to FIG. 1, there is depicted a block diagram of a data processing system with which aspects of the illustrative embodiments may advantageously be utilized. As shown, data processing system 100 includes processor units 111 a-111 n. Each of processor units 111 a-111 n includes a processor and a cache memory. For example, processor card 111 a contains processor 112 a and cache memory 113 a, and processor card 111 n contains processor 112 n and cache memory 113 n.

Processor units 111 a-111 n are connected to main bus 115. Main bus 115 supports a system planar 120 that contains processor units 111 a-111 n and memory cards 123. The system planar also contains data switch 121 and memory controller/cache 122. Memory controller/cache 122 supports memory cards 123 that include local memory 116 having multiple dual in-line memory modules (DIMMs).

Data switch 121 connects to bus bridge 117 and bus bridge 118 located within a native I/O (NIO) planar 124. As shown, bus bridge 118 connects to peripheral components interconnect (PCI) bridges 125 and 126 via system bus 119. PCI bridge 125 connects to a variety of I/O devices via PCI bus 128. As shown, hard disk 136 may be connected to PCI bus 128 via small computer system interface (SCSI) host adapter 130. A graphics adapter 131 may be directly or indirectly connected to PCI bus 128. PCI bridge 126 provides connections for external data streams through network adapter 134 and adapter card slots 135 a-135 n via PCI bus 127.

An industry standard architecture (ISA) bus 129 connects to PCI bus 128 via ISA bridge 132. ISA bridge 132 provides interconnection capabilities through NIO controller 133 having serial connections Serial 1 and Serial 2. A floppy drive connection, keyboard connection, and mouse connection are provided by NIO controller 133 to allow data processing system 100 to accept data input from a user via a corresponding input device. In addition, non-volatile RAM (NVRAM) 140, connected to ISA bus 129, provides a non-volatile memory for preserving certain types of data from system disruptions or system failures, such as power supply problems. A system firmware 141 is also connected to ISA bus 129 for implementing the initial Basic Input/Output System (BIOS) functions. A service processor 144 connects to ISA bus 129 to provide functionality for system diagnostics or system servicing.

The operating system (OS) is stored on hard disk 136, which may also provide storage for additional application software for execution by data processing system. NVRAM 140 is used to store system variables and error information for field replaceable unit (FRU) isolation. During system startup, the bootstrap program loads the operating system and initiates execution of the operating system. To load the operating system, the bootstrap program first locates an operating system kernel type from hard disk 136, loads the OS into memory, and jumps to an initial address provided by the operating system kernel. Typically, the operating system is loaded into random-access memory (RAM) within the data processing system. Once loaded and initialized, the operating system controls the execution of programs and may provide services such as resource allocation, scheduling, input/output control, and data management.

The illustrative embodiment may be embodied in a variety of data processing systems utilizing a number of different hardware configurations and software such as bootstrap programs and operating systems. The data processing system 100 may be, for example, a stand-alone system or part of a network such as a local-area network (LAN) or a wide-area network (WAN).

In known three-dimensional (3D) very-large-scale integration (VLSI) architectures, power delivery is mixed with high-speed signaling via C4 solder balls or pins to the 3D VLSI chip stack. However, the possible number of C4 pins which may be implemented limits that maximal input/output (I/O) bandwidth and power delivery. To distribute the power across the chip stack with minimal voltage drop, C4's on a 151 μm pitch are needed. Hence, only very few C4's may be used for signaling in the case of the limit of 44 C4's per square millimeter, constraining the communication bandwidth. Furthermore, by mixing the power delivery with the high-speed signaling on one side of the 3D VLSI chip stack as is currently done in known prior art, the thermal path is minimized from the junction to the cooling device due to the full access of the cold plate on the opposed chip stack surface whether the cooling device is air or liquid cooled. Similar mixing of power delivery with high-speed signaling via C4 solder balls or pins is also implemented in two-dimensional VLSI architectures. Thus, while the below description is directed to 3D VLSI architectures, the illustrative embodiments may also be implemented for other dimensional VLSI architectures without departing from the spirit and scope of the invention.

FIG. 2 depicts one example of a three-dimensional (3D) very-large-scale integration (VLSI) architecture in accordance with an illustrative embodiment. In order to increase power delivery to support future complementary metal-oxide semiconductor (CMOS) technologies, 3D VLSI architecture 200 comprises high-performance high-power processor layer 202 comprising a plurality of processor cores. Power delivery layer 204 delivers power (Vdd) and ground from data processing system 212 to high-performance high-power processor layer 202 via a first plurality of C4 solder balls 206 that are optimized by size and/or geometry to deliver the required power to each of the plurality of processor cores. While the illustrative embodiments use C4 solder balls, other types of coupling, such as copper pillars, may be used without departing from the spirit and scope of the invention. Possible implementations of power delivery layer 204 will be discussed in detail below. Power delivery layer 204 may be coupled to data processing system 212 using any type of coupling mechanism, such as connectors formed on a system board, cabling to a power supply, or the like. Using power delivery layer 204 to provide power via one side of 3D VLSI architecture 200 increases the number of C4 pins, as opposed to known systems, and increases the power delivery above the current limit of 100 watts per square centimeter. Additionally, providing power via one side of 3D VLSI architecture 200 decreases power noise that is currently experienced on signal paths when mixed with power on the same side of a 3D VLSI stack. Furthermore, TSVs needed to deliver the power to processor layer 202 through substrate/board 214 and signaling and input/output (I/O) layer 208 may be removed due to the direct power delivery from power delivery layer 204. Providing power from one side saves active silicon area and does not cause macro redesigns due to protruding TSVs, especially for large size memory blocks.

3D VLSI architecture 200 also comprises high-speed signaling and I/O layer 208 that comprises a plurality of high-speed signaling devices, which may include memory, switches, memory storage controller, or the like. In order to provide power to the high-speed signaling devices of high-speed signaling and I/O layer 208, 3D VLSI architecture 200 provides micro C4 (μC4) layer 210. Power passes from power delivery layer 204 through C4 solder balls 206, through processor layer 202 via through silicon vias (TSVs) within the silicon die of the processor layer, through μC4 layer 210, to high-speed signaling and I/O layer 208. A contact pad on one side of a die of processor layer 202 provides a connection of one or more C4 solder ball in C4 solder balls 206 to a TSV in processor layer 202, which passes power through processor layer 202 to a contact pad on the other side of the processor layer 202. The contact pad on the other side of processor layer 202 provides a connection of each TSV to a μC4 solder ball in μC4 layer 210. The use of micro μC4s in μC4 layer 210 allows higher interconnection density between processor layer 202 and high-speed signaling and I/O layer 208. Power may further pass from the μC4 layer 210 to one side of high-speed signaling and I/O layer 208. A contact pad on the side of high-speed signaling and I/O layer 208 provides a connection of one or more μC4 in μC4 layer 210 to a TSV in high-speed signaling and I/O layer 208, which passes power through high-speed signaling and I/O layer 208 to a contact pad on the other side of high-speed signaling and I/O layer 208. While only one high-speed signaling and I/O layer 208 is depicted, the illustrative embodiments recognize that any number of high-speed signaling and I/O layers may be implemented and connected via additional layers of C4 solder balls and TSVs.

Not only does μC4 layer 210 provide power to high-speed signaling and I/O layer 208, but μC4 layer 210 also provides connectivity for signaling between high-performance high-power processor layer 202 and high-speed signaling and I/O layer 208 in a reverse fashion similar to the above description for power delivery from one layer to another layer. In order for high-speed signaling and I/O layer 208 to transmit and receive signals with data processing system 212, high-speed signaling and I/O layer 208 is coupled to substrate/board 214 of data processing system 212 via a second plurality of C4 solder balls 216. In addition to providing connectivity for high-speed signaling and I/O, the second plurality of C4 solder balls 216 may also provide connectivity for ground as well as any low-power requirements that may not be provided by power delivery layer 204 via μC4 layer 210. Thus, high-speed signaling and I/O layer 208 comprises C4 pins for signals mixed with ground pins for shielding, power delivery, reference ground, and optional power for low(er) power chips.

Therefore, 3D VLSI architecture 200 provides for dedicated I/O for signal/ground via one side of the 3D stack and voltage/ground via an opposite side of the 3D stack. For connectivity to both high-performance high-power processor layer 202 and high-speed signaling and I/O layer 208, the illustrative embodiments provide different dedicated technologies, such as C4s, μC4s, or macroC4s in different geometries and pitches. Power delivery system 204 may provide power via power pads or power strips, while inductive, capacitive, or optical signal may be established via substrate/board 214 to high-speed signaling and I/O layer 208. The more flexible and granular arrangement of power pins for different power domains of high-performance high-power processor layer 202 decreases the restrictions associated with mixing signaling and I/O with power. That is, the different C4s pitch and geometries associated with a first plurality of C4 solder balls 206 precisely mimic power domains of processing units/processing cores of high-performance high-power processor layer 202. Furthermore, by not mixing power with signaling and I/O the inductances in power delivery are reduced and, thus, power noise in the signal and I/O paths is reduced.

FIGS. 3A-3C depict an example of a power delivery system implementation in accordance with an illustrative embodiment. In the illustrative embodiment shown in FIG. 3A, heat sink 302 comprises grooves 304 on one face of heat sink 302 that will be coupled directly to a first plurality of C4 solder balls providing connectivity to a high-performance high-power processor layer. Each groove in grooves 304 comprises insulating material 310 between the metal of heat sink 302 and conductors 312 which supply a path for power and ground from a coupled power supply to the first plurality of C4 solder balls. Insulating materials 310 may be comprised of any insulating material such as ceramics, oxides such as Aluminum Nitride (AlN), Aluminum Oxide (Al2O3), Silicon Dioxide (SiO2), polymers, or the like. Heat sink 302 may be comprised of any thermal conducting material such as copper, aluminum, or the like. Conductors 312 may be comprised of any electrical conducting material such as copper, aluminum, or the like. Depending on the required voltages of the processing units/processing cores of the high-performance high-power processor layer, one or more of conductors 312 in grooves 304 may supply one voltage, while another one or more of conductors 312 supply a different voltage, such as 1.00 volt, 1.10 volts, 1.20 volts, or the like, while another one or more of conductors 312 in grooves 304 may supply grounding potential. Additionally, heat sink 302 may be used for ground potential as long as heat sink 302 is coupled to the ground potential of the data processing system. Use of exemplary heat sink 302 provides very low impedance in power delivery, reduces noise, and reduces area impact associated with other types of power delivery systems.

In FIG. 3B, a face view of heat sink 302 is shown indicating that grooves 304 extend across the face of heat sink 302 that will be coupled directly to a first plurality of C4 solder balls. This figure shows only the grooves without the insulating material or the conducting material. In this example, the architecture of the high-performance high-power processor layer would be such that the various power pins of the processing units/processing cores of the high-performance high-power processor layer would need to be arranged such that the C4 pins would align with grooves 304 of heat sink 302. However, the illustrative embodiments are not limited to only providing straight grooves 304.

FIG. 3C depicts a face view of heat sink 302 indicating that grooves 304 are formed such that grooves 304 conform to the arrangement of the processing units/processing cores of the high-performance high-power processor layer. This figure shows only the grooves without the insulating material or the conducting material. Thus, as opposed to having grooves 304 extend across the face of heat sink 302 in a straight line or all the way across the face of heat sink 302, grooves 304 may be formed such that the grooves 304 conform to the C4 pins arrangement associated with the processing units/processing cores of the high-performance high-power processor layer.

Thus, the heat sink of the illustrative embodiments provides a conductive material for the heat sink to provide a plurality of voltages to the high-performance high-power processor layer without decoupling. The thermal coupling of the thermal power laminate to the heat sink may be performed in general with thermal interface materials (typically particle filled polymers), such as thermal grease, thermal adhesive, thermal pads, or by soldering or fusion bonding.

The description of the present invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention, the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated. 

1. A three-dimensional very-large-scale integration (VLSI) device, comprising: a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer; and a heat sink coupled, via a second set of coupling devices, to the processor layer, wherein: the heat sink comprises a plurality of grooves on one face, each groove in the plurality of grooves provides either a path for power or a path for ground to be delivered to the processor layer, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device, and the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.
 2. The three-dimensional VLSI device of claim 1, wherein each groove in the plurality of grooves comprises an insulating material between the heat sink and a conductor that supplies either the path for power or the path for ground.
 3. The three-dimensional VLSI device of claim 2, wherein the insulating material is at least one of a ceramic, an oxide, or a polymer.
 4. The three-dimensional VLSI device of claim 3, wherein the oxide is at least one of Aluminum Nitride (AlN), Aluminum Oxide (Al2O3), or Silicon Dioxide (SiO2).
 5. The three-dimensional VLSI device of claim 2, wherein the heat sink is a thermal conducting material and wherein the thermally conducting material is at least one of copper or aluminum.
 6. The three-dimensional VLSI device of claim 2, wherein the conductor is at least one of copper or aluminum.
 7. The three-dimensional VLSI device of claim 1, wherein the heat sink provides ground potential for the processor layer.
 8. The three-dimensional VLSI device of claim 1, wherein the plurality of grooves conform to the arrangement of a plurality of processors in the processor layer.
 9. A data processing system, comprising: a processor layer coupled, via a first set of coupling devices, to at least one signaling and input/output (I/O) layer; and a heat sink coupled, via a second set of coupling devices, to the processor layer, wherein: the heat sink comprises a plurality of grooves on one face, each groove in the plurality of grooves provides either a path for power or a path for ground to be delivered to the processor layer, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the data processing system, and the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.
 10. The data processing system of claim 9, wherein each groove in the plurality of grooves comprises an insulating material between the heat sink and a conductor that supplies either the path for power or the path for ground.
 11. The data processing system of claim 10, wherein the insulating material is at least one of a ceramic, an oxide, or a polymer.
 12. The data processing system of claim 11, wherein the oxide is at least one of Aluminum Nitride (AlN), Aluminum Oxide (Al2O3), or Silicon Dioxide (SiO2).
 13. The data processing system of claim 10, wherein the heat sink is a thermal conducting material and wherein the thermally conducting material is at least one of copper or aluminum.
 14. The data processing system of claim 10, wherein the conductor is at least one of copper or aluminum.
 15. The data processing system of claim 9, wherein the heat sink provides ground potential for the processor layer.
 16. The data processing system of claim 9, wherein the plurality of grooves conform to the arrangement of a plurality of processors in the processor layer.
 17. A method, in a data processing system, for integrated power delivery and distribution to integrated circuits via a heat sink in a three-dimensional very-large-scale integration (VLSI) device, the method comprising: coupling a processor layer to at least one signaling and input/output (I/O) layer using a first set of coupling devices; and coupling the heat sink to the processor layer using a second set of coupling devices, wherein: the heat sink comprises a plurality of grooves on one face, each groove in the plurality of grooves provides either a path for power or a path for ground to be delivered to the processor layer, the heat sink is dedicated to only delivering power and does not provide data communication signals to the elements of the three-dimensional VLSI device, and the at least one signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.
 18. The method of claim 17, wherein each groove in the plurality of grooves comprises an insulating material between the heat sink and a conductor that supplies either the path for power or the path for ground.
 19. The method of claim 18, wherein the insulating material is at least one of a ceramic, an oxide, or a polymer.
 20. The method of claim 19, wherein the oxide is at least one of Aluminum Nitride (AlN), Aluminum Oxide (Al2O3), or Silicon Dioxide (SiO2).
 21. The method of claim 18, wherein the heat sink is a thermal conducting material and wherein the thermally conducting material is at least one of copper or aluminum.
 22. The method of claim 18, wherein the conductor is at least one of copper or aluminum.
 23. The method of claim 17, wherein the heat sink provides ground potential for the processor layer.
 24. The method of claim 17, wherein the plurality of grooves conform to the arrangement of a plurality of processors in the processor layer. 